February 22, 2024
Journal Article

Tailoring p-type Behavior in ZnO Quantum Dots through Enhanced Sol-Gel Synthesis: Mechanistic Insights into Zinc Vacancies

Abstract

The synthesis and control of properties of p-type ZnO is crucial for a variety of optoelectronic and spintronic applications, however, it remains challenging due to the control of intrinsic midgap (defect) states. In this study, we demonstrate a synthetic route to yield colloidal ZnO quantum dots (QD) via an enhanced sol-gel process that effectively eliminates the residual intermediate reaction molecules which would otherwise weaken the excitonic emission. This process supports the creation of ZnO with p-type properties or compensation of inherited n-type defects, primarily due to zinc vacancies in oxygen-rich conditions. The in-depth analysis of carrier recombination in the midgap across several timescales reveals microsecond carrier lifetimes at room temperature which are expected to occur via zinc vacancy defects, supports the promoted p-type character of the synthesized ZnO QDs.

Published: February 22, 2024

Citation

Kahraman A., E. Socie, M. Nazari, D. Kazazis, M. Buldu-Akturk, V. Kabanova, and E. Biasin, et al. 2024. Tailoring p-type Behavior in ZnO Quantum Dots through Enhanced Sol-Gel Synthesis: Mechanistic Insights into Zinc Vacancies. The Journal of Physical Chemistry Letters 15, no. 6:1755–1764. PNNL-SA-194761. doi:10.1021/acs.jpclett.3c03519

Research topics